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SiC Mosfets

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Sperrspannung [V] RDS on [mOhm] Nennstrom [A] Nennstrom [mA] Nennstrom [25°] Betriebstemperatur[°C] Produkt Feature Produkt Status
GeneSiC G3R60MT07J G3R60MT07J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 750 60 44
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R60MT07D G3R60MT07D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 750 60 43
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R60MT07K G3R60MT07K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 750 60 37
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R12MT12K G3R12MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 12 157
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT12K G3R20MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 20 100
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT12N G3R20MT12N GeneSiC Diskret SiC Mosfets Aktive Komponenten SOT-227 1200 20 90
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Isolated Back-side
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GeneSiC G3R30MT12J G3R30MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 30 85
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R30MT12K G3R30MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 30 70
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12J G3R40MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 40 66
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12D G3R40MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 40 63
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R40MT12K G3R40MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 40 55
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12J G3R75MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 75 38
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12D G3R75MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 75 36
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R75MT12K G3R75MT12K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1200 75 31
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R160MT12J G3R160MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 160 19
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R160MT12D G3R160MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 160 19
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R350MT12J G3R350MT12J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1200 350 10
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R350MT12D G3R350MT12D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1200 350 10
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested
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GeneSiC G3R20MT17K G3R20MT17K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1700 20 95
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R20MT17N G3R20MT17N GeneSiC Diskret SiC Mosfets Aktive Komponenten SOT-227 1700 20 84
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Isolated Back-side
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GeneSiC G3R45MT17D G3R45MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 45 52
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R45MT17K G3R45MT17K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 1700 45 46
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness

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GeneSiC G3R160MT17J G3R160MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 160 18
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G3R160MT17D G3R160MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 160 17
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G3R450MT17J G3R450MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 450 8
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G3R450MT17D G3R450MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 450 7
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G2R1000MT17J G2R1000MT17J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 1700 1000 5
-G2R™ Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Optimized Package with seperate Driver Source Pin

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GeneSiC G2R1000MT17D G2R1000MT17D GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-3 1700 1000 5
-G2R™ Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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GeneSiC G2R50MT33K G2R50MT33K GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-247-4 3300 50 63
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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GeneSiC G2R120MT33J G2R120MT33J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 3300 120 33
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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GeneSiC G2R1000MT33J G2R1000MT33J GeneSiC Diskret SiC Mosfets Aktive Komponenten TO-263-7 3300 1000 5
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Industry-Leading UIL and short-Circuit Robustness -Robust Body Diode with Low VF and Low QRR -Normally Off-stable Temperature upto 175°C -Optimized Package with seperate Driver Source Pin
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No Image G3R10MT07-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 750 10 100 100000
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R10MT07-CAU GeneSiC Bare Die SiC Mosfets Aktive Komponenten 750 10 100 100000
-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G4R10MT12-CAU GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 10 120 120000
-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G4R10MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 10 120 120000
-G4R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R12MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 12 100 100000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R20MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 20 60 60000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R30MT12-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1200 30 45 45000
-G3R™ (3rd Generation) Technology -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R20MT17-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1700 20 75 75000
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G3R45MT17-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 1700 45 35 35000
-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Industry-Leading UIL and short-Circuit Robustness
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No Image G2R50MT33-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 3300 50 50 50000
-Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Normally Off-stable temperature up to 175° C -Industry-Leading UIL and short-Circuit Robustness
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No Image G2R300MT65-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 6500 300 10 10000
-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and reliable body Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature
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No Image G2R325MS65-CAL GeneSiC Bare Die SiC Mosfets Aktive Komponenten 6500 325 10 10000
-G2R™ Technology with +20 V / -5 V Gate Drive -Superior QG X RDS (ON) Figure of Merit -Low Capacitances and Low gate charge -Normally Off-stable operation up to 175° C -Fast and Reliable Integrated Schottky Diode -High Avalanche and short circuit Ruggedness -Low condition Losses at High Temperature
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No Image GP2T020A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 20
in production
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SemiQ GP2T020A120X GP2T020A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 20
in production
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No Image GP2T040A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 40
in production
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SemiQ GP2T040A120X GP2T040A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 40
in production
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No Image GP2T080A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 80
in production
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SemiQ GP2T080A120X GP2T080A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 80
in production
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No Image GP2T020A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 20 119 0,119 86
in production
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SemiQ GP2T020A120H GP2T020A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 20 119 0,119 86 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120U GP2T040A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*
 in production
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SemiQ GP2T040A120H GP2T040A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120J GP2T040A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 38 66 0,066 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T080A120U GP2T080A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*
 in production
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SemiQ GP2T080A120H GP2T080A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design
 in production
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SemiQ GP2T080A120J GP2T080A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving
 in production
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SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 9 218 0,218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 10 202 0,202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 77 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 37 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 40 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 80 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Anfragen
SemiQ GCMX020A120B2B1P GCMX020A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 19 102 0,102 89 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX010A120B2B1P GCMX010A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 9 214 0,214 186 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX010A120B3B1P GCMX010A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 9 173 0,173 151 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX005A120B3B1P GCMX005A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 4,4 383 0,383 331 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX040A120B3H1P GCMX040A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 53 0,053 46 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX020A120B3H1P GCMX020A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 18,1 93 0,093 81 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX020A120B2H1P GCMX020A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Full Bridge Module 1200 18 102 0,102 88 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
SemiQ GCMX040A120B2H1P GCMX040A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 56 0,056 49 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Anfragen
Scroll

IGBT

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Betriebstemperatur[°C] Produkt Feature
No Image GK10PI60C6H Silver Micro Module IGBT Aktive Komponenten C6 600 10 0,01 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK10PI60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 10 0,01 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10RFF120B2H Silver Micro Module IGBT Aktive Komponenten B2 1200 10 0,01 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 10 0,01 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120B2H Silver Micro Module IGBT Aktive Komponenten B2 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10FF120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT10PI120B2FH Silver Micro Module IGBT Aktive Komponenten B2F 1200 10 0,01 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120B2FH Silver Micro Module IGBT Aktive Komponenten B2F 1200 15 0,015 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 15 0,015 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOATested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GT15FF120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 15 0,015 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 15 0,015 25 to 150
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 15 0,015 25 to 150
Short Circuit Rated >10μs - Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 15A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT15FF120A1H Silver Micro Module IGBT Aktive Komponenten A1 1200 15 0,015 25 to 150
Short Circuit Rated >10μs - Low Saturation Voltage: VCE (sat) = 1.90V @ IC = 15A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK20PI60B2FH Silver Micro Module IGBT Aktive Komponenten B2F 600 20 0,02 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK20PI60C6H Silver Micro Module IGBT Aktive Komponenten C6 600 20 0,02 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK20PI60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 20 0,02 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25FF120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 25 0,025 25 to 150
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25PI120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 25 0,025 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25PI120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 25 0,025 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT25PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 25 0,025 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK30PI60B9H Silver Micro Module IGBT Aktive Komponenten B9 600 30 0,03 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK30PI60B3H Silver Micro Module IGBT Aktive Komponenten B3 600 30 0,03 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK30FF60C6H Silver Micro Module IGBT Aktive Komponenten C6 600 30 0,03 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK35FF60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 35 0,035 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK35PI60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 35 0,035 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK35FB60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 35 0,035 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT35PI120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 35 0,035 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT35FF120C6H Silver Micro Module IGBT Aktive Komponenten C6 1200 35 0,035 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40FB120A1H Silver Micro Module IGBT Aktive Komponenten A1 1200 40 0,04 25 to 150
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40PI120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 40 0,04 25 to 150
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40RFF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT40FF120B3H Silver Micro Module IGBT Aktive Komponenten B3 1200 40 0,04 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK50FF60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 50 0,05 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF65B2H Silver Micro Module IGBT Aktive Komponenten B2 650 50 0,05 25 to 150
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF120A1H Silver Micro Module IGBT Aktive Komponenten A1 1200 50 0,05 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF50HH120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 50 0,05 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 50 0,05 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 50 0,05 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT50FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 50 0,05 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF50HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 50 0,05 25 to 150
NPT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75CU170T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1700 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75FF60A1H Silver Micro Module IGBT Aktive Komponenten A1 600 75 0,075 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75FF60T5H Silver Micro Module IGBT Aktive Komponenten T5 600 75 0,075 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75PI60T6H Silver Micro Module IGBT Aktive Komponenten T6 600 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK75HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTM75FF120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HF120T1H Silver Micro Module IGBT Aktive Komponenten T1 1200 75 0,075 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75HF120T1H Silver Micro Module IGBT Aktive Komponenten T1 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated > 10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HH120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 75 0,075 25 to 150
NPT Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 75 0,075 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75FF120B9H Silver Micro Module IGBT Aktive Komponenten B9 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF75HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 75 0,075 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75CU120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT75HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 75 0,075 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK100HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100CL120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK100PI60T6H Silver Micro Module IGBT Aktive Komponenten T6 600 100 0,1 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTM100TL65B9H Silver Micro Module IGBT Aktive Komponenten B9 650 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100CU120B5H Silver Micro Diskret IGBT Aktive Komponenten B5 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100SG120B5H Silver Micro Module IGBT Aktive Komponenten B5 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated > 10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100FF120T5H Silver Micro Module IGBT Aktive Komponenten T5 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100CU120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT100TD120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 100 0,1 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF100HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 100 0,1 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GTR150HF65T1VH Silver Micro Module IGBT Aktive Komponenten T1V 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CU65T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF65T1VH Silver Micro Module IGBT Aktive Komponenten T1V 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR150TL65T2SH Silver Micro Module IGBT Aktive Komponenten T2S 650 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF120T1VH Silver Micro Module IGBT Aktive Komponenten T1V 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CL120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 150
NPT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Req
Anfragen
No Image GT150CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF170T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1700 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GK150HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 150 0,15 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTM150TL65B9H Silver Micro Module IGBT Aktive Komponenten B9 650 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF120T1NH Silver Micro Module IGBT Aktive Komponenten T1N 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CU120T1VH Silver Micro Diskret IGBT Aktive Komponenten T1V 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150HF120A5H Silver Micro Module IGBT Aktive Komponenten A5 1200 150 0,15 25 to 150
- NPT IGBT Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CE120T1H Silver Micro Module IGBT Aktive Komponenten T1 1200 150 0,15 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF150HH120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150CZ120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150PI120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 150 0,15 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT150HF170T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1700 150 0,15 25 to 175
Short Circuit Rated ＞10μs - Low Saturation Voltage: VCE (sat) = 2.30V @ IC = 150A , TC=25℃ - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF200CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF200HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement

Anfragen
No Image GK200HF60T1VH Silver Micro Module IGBT Aktive Komponenten T1V 600 200 0,2 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR200HF65T1VH Silver Micro Module IGBT Aktive Komponenten T1V 650 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR200TL65T2SH Silver Micro Module IGBT Aktive Komponenten T2S 650 200 0,2 25 to 175
Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200TL65A8H Silver Micro Module IGBT Aktive Komponenten A8 650 200 0,2 25 to 175
Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200FF65T6H Silver Micro Module IGBT Aktive Komponenten T6 650 200 0,2 25 to 175
Short Circuit Rated 10μs - Low Saturation Voltage: VCE (Sat) =1.60V IC= 200A,TC=25℃ - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - HI-REL Power Terminals - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200FF120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200CZ120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200FF120T6H Silver Micro Module IGBT Aktive Komponenten T6 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT200TD120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 200 0,2 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR300TL65T2SH Silver Micro Module IGBT Aktive Komponenten T2S 650 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated > 10ps - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2xIc) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF300HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GF300CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free,Compliant with RoHS Requirement
Anfragen
No Image GF300CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF300HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF300CL120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested (2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300TL120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - VCE(sat) with Positive Temperature Coefficient - Reliable Mechanical Design with Injection Moulded Terminals and Reliable Internal Connections - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CH120T9H Silver Micro Diskret IGBT Aktive Komponenten T9 1200 300 0,3 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Copper Wire Bonding on Power Terminal - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF120T9H Silver Micro Module IGBT Aktive Komponenten T9 1200 300 0,3 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CL120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300CU120T2VH Silver Micro Diskret IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300TD120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated ＞10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF170T9H Silver Micro Module IGBT Aktive Komponenten T9 1700 300 0,3 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT300HF170T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1700 300 0,3 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF65T2NH Silver Micro Module IGBT Aktive Komponenten T2N 650 400 0,4 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400DC120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 400 0,4 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GF400SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 400 0,4 25 to 150
- Non Punch Through (NPT) Technology - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF65T2VH Silver Micro Module IGBT Aktive Komponenten T2V 650 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400SD65T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 650 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GTR400HF65A5H Silver Micro Module IGBT Aktive Komponenten A5 650 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>5μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 400 0,4 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400TT120A8H Silver Micro Module IGBT Aktive Komponenten A8 1200 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Mixed Voltage Component Topology - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF120T2VH Silver Micro Module IGBT Aktive Komponenten T2V 1200 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 400 0,4 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT400HF170T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1700 400 0,4 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated ＞ 10μs - Low Switching Loss - 100% RBSOA Tested（2×Ic） - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CE120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CL120T2NH Silver Micro Diskret IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF65T9H Silver Micro Module IGBT Aktive Komponenten T9 650 450 0,45 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CU120T2NH Silver Micro Diskret IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF120T2NH Silver Micro Module IGBT Aktive Komponenten T2N 1200 450 0,45 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450CH120T9H Silver Micro Diskret IGBT Aktive Komponenten T9 1200 450 0,45 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Copper Wire Bonding on Power Terminal - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF120T9H Silver Micro Module IGBT Aktive Komponenten T9 1200 450 0,45 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT450HF120A4H Silver Micro Module IGBT Aktive Komponenten A4 1200 450 0,45 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600SD170T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1700 600 0,6 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF65T2NH Silver Micro Module IGBT Aktive Komponenten T2N 650 600 0,6 25 to 175
- Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF65T9H Silver Micro Module IGBT Aktive Komponenten T9 650 600 0,6 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
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No Image GF600SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 600 0,6 25 to 150
Non Punch Through (NPT) Technology - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
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No Image GT600SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 600 0,6 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated> 10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600CH120T9H Silver Micro Diskret IGBT Aktive Komponenten T9 1200 600 0,6 25 to 175
Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF120T9H Silver Micro Module IGBT Aktive Komponenten T9 1200 600 0,6 25 to 175
- Trench & Field Stop IGBT - Short Circuit Rated>10μs - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT600HF170T9H Silver Micro Module IGBT Aktive Komponenten T9 1700 600 0,6 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated>10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
Anfragen
No Image GT800SD65T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 650 800 0,8 25 to 175
Field Stop Trench Gate IGBT - Short Circuit Rated >10μs - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2×Ic) - Low Stray Inductance - Lead Free, Compliant with RoHS Requiremen
Anfragen
No Image GT900SD120T2ZH Silver Micro Diskret IGBT Aktive Komponenten T2Z 1200 900 0,9 25 to 175
Field Stop Trench Gate IGBTShort Circuit Rated>10us - Low Saturation Voltage - Low Switching Loss - 100% RBSOA Tested(2xIc) - Low Stray Inductance - Lead Free, Compliant with RoHS Requirement
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